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Shenzhen Ruize Technology Co., Ltd.

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Home > Products > SGL160N60UFD G160N60 TO-264 MOS IGBT Transistor
SGL160N60UFD G160N60 TO-264 MOS IGBT Transistor
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Product： views：5SGL160N60UFD G160N60 TO-264 MOS IGBT Transistor 
Branch： Original
Unit Price： Negotiated
Min.Order：
Supply：
Delivery： Shipment within days since the date of payment
Valid until： Long Term
Updated on： 2019-10-17 02:46
  Negotiated
Product Details
Overview
Quick Details
D/C:
18+
Package:
TSOP48
Model Number:
IS61WV102416BLL-10TLI
Brand Name:
Original
Place of Origin:
American Samoa
Collector - emitter maximum voltage VCEO:
600 V
Collector - emitter saturation voltage:
2.1 V
Gate/emitter maximum voltage:
+/- 20 V
Pd- power dissipation:
250 W
Size:
26*20*5mm
Gate - emitter leakage current:
+/- 100 nA
more details:
please contact us
skype:
ruizeinc_1
Supply Ability
Supply Ability:
2000 Piece/Pieces per Day
Packaging & Delivery
Packaging Details
Antistatic bag
Port
Shanghai, Ningbo, Hongkong, Shenzhen or any other China port
Lead Time:
Quantity(Pieces)1 - 2000 >2000
Est. Time(days)3To be negotiated
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