Efficiency
(%)

ChargedPower
(Wp)

lmp
(A)

Vmp
(V)

Isc
(A)

Voc
(M)

21.5

5.25

9.53

0.551

10.12

0.662

21.4

5.23

9.51

0.55

10.12

0.661

21.3

5.2

9.49

0.548

10.11

0.661

21.2

5.18

9.49

0.546

10.11

0.66

21.1

5.16

9.48

0.544

10.1

0.66

21

5.13

9.47

0.542

10.1

0.659

20.9

5.11

9.46

0.54

10.09

0.659

20.8

5.08

9.45

0.538

10.09

0.658

20.7

5.06

9.43

0.537

10.08

0.658

* Under standard test condition: 1000W/ m", AM 1.5, 25C
* Average accuracy of all tested figures is +1.0% rel.

Characteristics

Dimensions

156.75mmX156.75mm±0.25mm,

With210mm±0.25mmdiagonal

Thickness(Si)

180μm±20μm/200μm±20μm

Front

Silverbusbars;Blue/Purple

Siliconnitrideanti-reflectioncoating

Back

Silverbusbars;Full-surfacealuminumBSF

Features

1.2.2% larger area & power for same efficiency bin

2. High conversion efficiency

4. Advanced passivation technology

5. Excellent solder-ability and adhesion strength

6. Low breakage rate

7. Good color uniformity

8. Vacuum package to avoid oxidation

9. Five bus bars to reduce series resistance and improve module power