Properties of the SG01S-18 UV photodiode  Broadband UVA+UVB+UVC, PTB tested high chip stability  Active Area A = 0,06 mm2 TO18 hermetically sealed metal housing  10mW/cm2 peak radiation results a current of approx. 780nA  About the material Silicon Carbide (SiC) SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C. The temperature coefficient of signal (responsivity) is also low, <0,1%/K. Because of the low noise (dark current, in the fA range), very low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see circuit on following page). SiC photodiodes are available as unfiltered broadband devices or with optical filters providing UV-A, UV-B, or UV-C-only sensitivity, or erythemal action curve compliance.